NST3906DXV6 Series

Dual PNP Bipolar Transistor

Catalog

Dual PNP Bipolar Transistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Frequency - Transition	Transistor Type	Supplier Device Package
ON Semiconductor NST3906DXV6T1G	-55 °C	150 °C	100	Surface Mount	SOT-563 SOT-666	200 mA	40 V	400 mV	500 mW	250 MHz	2 PNP (Dual)	SOT-563
ON Semiconductor NST3906DP6T5G	-55 °C	150 °C	100	Surface Mount	SOT-963	200 mA	40 V	400 mV	350 mW	250 MHz	2 PNP (Dual)	SOT-963

Catalog

Dual PNP Bipolar Transistor

Key Features

• hFE, 100-300

• Low VCE(sat), <0.4 V

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• This is a Pb-Free Device

Description

The Dual PNP Bipolar Transistor is a spin-off of our popular SOT 23, SOT323, SOT563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low power surface mount applications, where board space is at a premium.