SIHB17 Series

Catalog

MOSFET N-CH 800V 15A D2PAK

Part	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHB17N80E-GE3	MOSFET (Metal Oxide)	800 V	10 V	TO-263 (D2PAK)	30 V	Surface Mount	122 nC	208 W	N-Channel	4 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15 A	2408 pF	290 mOhm
Vishay General Semiconductor - Diodes Division SIHB17N80AE-GE3	MOSFET (Metal Oxide)	800 V	10 V	TO-263 (D2PAK)	30 V	Surface Mount	62 nC		N-Channel	4 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15 A	1260 pF	290 mOhm	179 W