IRF99 Series

Manufacturer: INFINEON

Catalog

MOSFET 2N-CH 20V 10A/12A 8SO

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case	Package / Case	Configuration	Technology	Drain to Source Voltage (Vdss)	FET Feature	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
INFINEON IRF9910TR	10 A 12 A	2 W	150 °C	-55 °C	11 nC	8-SO	Surface Mount	13.4 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V
INFINEON IRF9910TRPBF-1	10 A 12 A	2 W	150 °C	-55 °C		8-SOIC	Surface Mount	9.3 mOhm 13.4 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	MOSFET (Metal Oxide)	20 V		2.55 V	11 nC 23 nC
INFINEON IRF9910TRPBF	10 A 12 A	2 W	150 °C	-55 °C	11 nC	8-SO	Surface Mount	9.3 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V
INFINEON IRF9910PBF	10 A 12 A	2 W	150 °C	-55 °C	11 nC	8-SO	Surface Mount	13.4 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V
INFINEON IRF9910	10 A 12 A	2 W	150 °C	-55 °C	11 nC	8-SO	Surface Mount	13.4 mOhm	0.154 in	8-SOIC	3.9 mm	2 N-Channel (Dual)	MOSFET (Metal Oxide)	20 V	Logic Level Gate	2.55 V