FQD2 Series

Catalog

MOSFET N-CH 600V 1.9A DPAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQD2N60CTF	235 pF	4.7 Ohm	10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	2.5 W 44 W	12 nC	TO-252AA	4 V	N-Channel	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	1.9 A
ON Semiconductor FQD20N06LETM	665 pF			Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	2.5 W 38 W		TO-252AA	2.5 V	N-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	17.2 A	60 mOhm	13 nC	10 V	5 V
ON Semiconductor FQD20N06TF		63 mOhm	10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	2.5 W 38 W		TO-252AA	4 V	N-Channel	MOSFET (Metal Oxide)	25 V	-55 °C	150 °C	16.8 A
ON Semiconductor FQD2N90TF	500 pF	7.2 Ohm	10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	900 V	2.5 W 50 W		TO-252AA	5 V	N-Channel	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	1.7 A
ON Semiconductor FQD2N80TF	550 pF	6.3 Ohm	10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	2.5 W 50 W		TO-252AA	5 V	N-Channel	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	1.8 A
ON Semiconductor FQD2N80TM_WS	550 pF	6.3 Ohm	10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	2.5 W 50 W		TO-252AA	5 V	N-Channel	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	1.8 A
ON Semiconductor FQD20N06LTM	630 pF			Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	2.5 W 38 W		TO-252AA	2.5 V	N-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	17.2 A	60 mOhm	13 nC	10 V	5 V
ON Semiconductor FQD20N06LTF	630 pF			Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	2.5 W 38 W		TO-252AA	2.5 V	N-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	17.2 A	60 mOhm	13 nC	10 V	5 V
ON Semiconductor FQD20N06LETM	665 pF			Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	2.5 W 38 W		TO-252 (DPAK)	2.5 V	N-Channel	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	17.2 A	60 mOhm	13 nC	10 V	5 V