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600V 76A TO-247, Low-noise Power MOSFET
Description
AI
R6076ENZ4 is a power MOSFET for switching applications.
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600V 76A TO-247, Low-noise Power MOSFET
600V 76A TO-247, Low-noise Power MOSFET
| Part | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Mounting Type | Power Dissipation (Max) | Operating Temperature | Drain to Source Voltage (Vdss) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | TO-247-3 | MOSFET (Metal Oxide) | 76 A | TO-247 | 260 nC | 6500 pF | N-Channel | Through Hole | 735 W | 150 °C | 600 V | 20 V | 42 mOhm | 10 V | ||||
 Rohm Semiconductor | TO-247-3 | MOSFET (Metal Oxide) | 76 A | TO-247 | 115 nC | N-Channel | Through Hole | 740 W | 600 V | 30 V | 55 mOhm | 10 V | 150 °C | -55 °C | 7000 pF | 5 V |