SI4102 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 3.8A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.8 A | MOSFET (Metal Oxide) | 6 V 10 V | 8-SOIC | 2.4 W 4.8 W | 20 V | 4 V | 8-SOIC | 3.9 mm | 0.154 in | 11 nC | 100 V | N-Channel | 370 pF | -55 °C | 150 °C | 158 mOhm | Surface Mount |