SI7788 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 50A PPAK SO-8
| Part | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 5.2 W 69 W | 20 V | 5370 pF | 4.5 V 10 V | 125 nC | MOSFET (Metal Oxide) | 3.1 mOhm | 2.5 V | PowerPAK® SO-8 | 50 A | -55 °C | 150 °C | Surface Mount | 30 V | PowerPAK® SO-8 | N-Channel |