IPB06N Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 30V 50A D2PAK

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Power Dissipation (Max)	FET Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
INFINEON IPB06N03LB	MOSFET (Metal Oxide)	50 A	22 nC	2 V	30 V	2782 pF	4.5 V 10 V	6.3 mOhm	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	83 W	N-Channel	20 V	175 °C	-55 °C
INFINEON IPB06N03LAT	MOSFET (Metal Oxide)	50 A	22 nC	2 V	25 V		4.5 V 10 V	5.9 mOhm	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	83 W	N-Channel	20 V	175 °C	-55 °C	2653 pF	PG-TO263-3-2
INFINEON IPB06N03LA G	MOSFET (Metal Oxide)	50 A	22 nC	2 V	25 V		4.5 V 10 V	5.9 mOhm	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	83 W	N-Channel	20 V	175 °C	-55 °C	2653 pF	PG-TO263-3-2
INFINEON IPB06N03LB G	MOSFET (Metal Oxide)	50 A	22 nC	2 V	30 V	2782 pF	4.5 V 10 V	6.3 mOhm	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	83 W	N-Channel	20 V	175 °C	-55 °C