IRF200 Series

Manufacturer: INFINEON

Catalog

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 16.9 MOHM;

Part	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)
INFINEON IRF200S234	417 W	175 °C	-55 °C	Surface Mount	16.9 mOhm	5 V	MOSFET (Metal Oxide)	200 V	6484 pF	162 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	90 A	10 V	20 V
INFINEON IRF200P222		175 °C	-55 °C	Through Hole	6.6 mOhm	4 V	MOSFET (Metal Oxide)	200 V		203 nC	TO-247-3	N-Channel	182 A	10 V	20 V	9820 pF	TO-247AC	556 W