BSM600D12P4G103 Series

1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET

Catalog

1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max	Technology	Mounting Type	Package / Case	Configuration	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package
Rohm Semiconductor BSM600D12P4G103	567 A	1.78 kW	Silicon Carbide (SiC)	Chassis Mount	Module	2 N-Channel (Dual)	175 °C	59000 pF	1.2 kV	1200 V	4.8 V	Module

Catalog

1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET

Description

BSM600D12P4G103 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.