Catalog
20V, 2 A PNP/PNP low VCEsat double transistor
Description
AI
PNP/PNP low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Beta
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20V, 2 A PNP/PNP low VCEsat double transistor
20V, 2 A PNP/PNP low VCEsat double transistor
| Part | Power - Max [Max] | Operating Temperature | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Qualification | Mounting Type | Grade | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 510 mW | 150 °C | 95 MHz | 2 A | 250 | DFN2020D-6 | AEC-Q101 | Surface Mount | Automotive | 100 nA | 390 mV | 6-UDFN Exposed Pad | 20 V | 2 PNP (Dual) |