IXFH50N60P3 Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]
Littelfuse/Commercial Vehicle Products IXFH50N60P3	TO-247AD (IXFH)	6300 pF	50 A	-55 °C	150 °C	94 nC	5 V	145 mOhm	1040 W	N-Channel	TO-247-3	MOSFET (Metal Oxide)	10 V	Through Hole	30 V	600 V
Littelfuse/Commercial Vehicle Products IXFH50N85X	TO-247 (IXTH)	4480 pF	50 A	-55 °C	150 °C	152 nC	5.5 V		890 W	N-Channel	TO-247-3	MOSFET (Metal Oxide)	10 V	Through Hole	30 V	850 V	105 mOhm

Catalog

DiscMSFT NCh UltrJnctn XClass TO-247AD

Key Features

• Ultra low on-resistance RDS(ON)and gate charge Qg

• Fast body diode

• dv/dt ruggedness

• Avalanche rated

• Low package inductance

• International standard packages

Description

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings