FDD86369_F085 Series

N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ

Catalog

N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Power Dissipation (Max)	Vgs (Max)	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Grade	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package
ON Semiconductor FDD86369-F085	80 V	2530 pF	AEC-Q101	150 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	Surface Mount	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	90 A	54 nC	Automotive	4 V	7.9 mOhm	TO-252AA
ON Semiconductor FDD86369	80 V	2530 pF	AEC-Q101	150 W	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	Surface Mount	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	90 A	54 nC	Automotive	4 V	7.9 mOhm	TO-252 (DPAK)

Catalog

N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ

Key Features

• Typical rDS(ON)= 5.9mΩ at VGS= 10V, ID= 80A

• Typical Qg(tot)= 34 nC at VGS= 10V, ID= 80A

• UIS capability

• RoHS Compliant

Description

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.