CSD18532NQ5B Series

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
Texas Instruments CSD18532NQ5B	5340 pF	60 V	3.4 mOhm	N-Channel	22 A 100 A	64 nC	8-VSON-CLIP (5x6)	6 V 10 V	20 V	3.4 V	3.2 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	8-PowerTDFN
Texas Instruments CSD18532KCS	4680 pF	60 V	4.2 mOhm	N-Channel	100 A		TO-220-3	4.5 V 10 V	20 V			MOSFET (Metal Oxide)	Through Hole	-55 °C	175 ░C	TO-220-3	2.2 V	53 nC	250 W
Texas Instruments CSD18532NQ5BT	5340 pF	60 V	3.4 mOhm	N-Channel	100 A	64 nC	8-VSON-CLIP (5x6)	6 V 10 V	20 V	3.4 V	3.1 W 156 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	8-PowerTDFN
Texas Instruments CSD18532Q5BT	5070 pF	60 V	3.2 mOhm	N-Channel	100 A	58 nC	8-VSONP (5x6)	4.5 V 10 V	20 V		3.2 W 156 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	8-PowerTDFN	2.2 V

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm

Key Features

• Ultra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLogic LevelLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLogic LevelLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 60-V, 2.7-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 60-V, 2.7-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.