SI4401 Series

Catalog

MOSFET P-CH 40V 16.1A 8SO

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI4401DDY-T1-GE3	P-Channel	4.5 V 10 V	20 V	95 nC	8-SOIC	3.9 mm	0.154 in	2.5 V	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	-55 °C	150 °C	16.1 A	2.5 W 6.3 W	40 V	15 mOhm
Vishay General Semiconductor - Diodes Division SI4401BDY-T1-E3	P-Channel	4.5 V 10 V	20 V		8-SOIC	3.9 mm	0.154 in	3 V	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	-55 °C	150 °C	8.7 A	1.5 W	40 V	14 mOhm	55 nC
Vishay General Semiconductor - Diodes Division SI4401FDY-T1-GE3	P-Channel	4.5 V 10 V	20 V		8-SOIC	3.9 mm	0.154 in	2.3 V	Surface Mount	8-SO	MOSFET (Metal Oxide)	-55 °C	150 °C		2.5 W 5 W	40 V		100 nC	14.2 mOhm	4000 pF
Vishay General Semiconductor - Diodes Division SI4401DY-T1-E3	P-Channel	4.5 V 10 V	20 V		8-SOIC	3.9 mm	0.154 in	1 V	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	-55 °C	150 °C	8.7 A	1.5 W	40 V	15.5 mOhm	50 nC