Catalog
650V 7A TO-263, High-speed switching Power MOSFET
Description
AI
R6507KNJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 7A TO-263, High-speed switching Power MOSFET
650V 7A TO-263, High-speed switching Power MOSFET
| Part | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | FET Type | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 20 V | 78 W | 5 V | 650 V | 14.5 nC | Surface Mount | N-Channel | 150 °C | 7 A | 10 V | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | LPTS | 470 pF | 665 mOhm |