HGTG7N60A4D Series

600V, SMPS IGBT

Catalog

600V, SMPS IGBT

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Switching Energy	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Gate Charge	Mounting Type	Test Condition	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case
ON Semiconductor HGTG7N60A4D	-55 °C	150 °C	2.7 V	55 µJ 60 µJ	56 A	11 ns	100 ns	37 nC	Through Hole	7 A 15 V 25 Ohm 390 V	34 ns	34 A	600 V	TO-247-3	TO-247-3

Catalog

600V, SMPS IGBT

Key Features

• 14A, 600V @ TC= 110°C

• Low Saturation Voltage : VCE(sat)= 1.9 V @ IC= 7A

• Typical Fall Time. . . . . . . . . . 75ns at TJ= 125°C

• Low Conduction Loss

Description

The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.