IRS2117 Series
Manufacturer: INFINEON
Beta
⌘K
IC GATE DRVR HIGH-SIDE 8DIP
| Part | Gate Type | Input Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Logic Voltage - VIL, VIH | Package / Case | Rise / Fall Time (Typ) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Number of Drivers | Supplier Device Package | Driven Configuration | Mounting Type | Channel Type | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 20 V | 10 VDC | -40 °C | 150 °C | 6 V 9.5 V | 8-DIP (0.300" 7.62mm) | 75 ns | 35 ns | 600 mA | 290 mA | 600 V | 1 | 8-PDIP | High-Side | Through Hole | Single | ||
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 20 V | 10 VDC | -40 °C | 150 °C | 6 V 9.5 V | 8-SOIC | 75 ns | 35 ns | 600 mA | 290 mA | 600 V | 1 | 8-SOIC | High-Side | Surface Mount | Single | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 20 V | 10 VDC | -40 °C | 150 °C | 6 V 9.5 V | 8-DIP (0.300" 7.62mm) | 75 ns | 35 ns | 600 mA | 290 mA | 600 V | 1 | 8-PDIP | High-Side | Through Hole | Single | ||
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 20 V | 10 VDC | -40 °C | 150 °C | 6 V 9.5 V | 8-SOIC | 75 ns | 35 ns | 600 mA | 290 mA | 600 V | 1 | 8-SOIC | High-Side | Surface Mount | Single | 0.154 in | 3.9 mm |