HGTP5N120BND Series

1200V, NPT IGBT

Catalog

1200V, NPT IGBT

Part	Current - Collector (Ic) (Max) [Max]	Switching Energy	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Test Condition	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor HGTP5N120BND	21 A	390 µJ 450 µJ	65 ns	1200 V	Through Hole	5 A 15 V 25 Ohm 960 V	40 A	2.7 V	167 W	TO-220-3	NPT	22 ns	160 ns	53 nC	-55 °C	150 °C	TO-220-3

Catalog

1200V, NPT IGBT

Key Features

• 10A, 1200V @ TC= 110°C

• Low Saturation Voltage : VCE(sat)= 2.45 V @ IC= 5A

• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

HGTP5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and motor control.