
Catalog
30 V, dual N-channel Trench MOSFET
Description
AI
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

30 V, dual N-channel Trench MOSFET
30 V, dual N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Mounting Type | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Qualification | Grade | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs [Max] | Configuration | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | -55 °C | 6-UDFN Exposed Pad | Surface Mount | 485 mW | 256 pF | AEC-Q100 | Automotive | 5 nC | 30 V | 1.25 V | MOSFET (Metal Oxide) | 72 mOhm | 2 N-Channel (Dual) | DFN2020D-6 |