Catalog
12 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Package / Case | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | Power Dissipation (Max) | Technology | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 8-PowerVDFN | 8 V | 6500 pF | Surface Mount | 18.7 A 98.6 A | 12 V | 150 °C | -55 °C | 900 mV | 1.8 V | 4.5 V | 50 W | 1.8 W | MOSFET (Metal Oxide) | P-Channel | MLPAK33 | 3.7 mOhm | 110 nC |