High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.38 Ω@10V, TO-220SIS, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.38 Ω@10V, TO-220SIS, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.38 Ω@10V, TO-220SIS, DTMOSⅤ
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Through Hole | 380 mOhm | 600 V | 4 V | TO-220SIS | 20 nC | 30 W | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 590 pF | N-Channel | 9.7 A | 30 V | 150 °C | 10 V |