IR2308 Series
Manufacturer: INFINEON
EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SHOOT THROUGH PROTECTION
| Part | Gate Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | High Side Voltage - Max (Bootstrap) [Max] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Channel Type | Driven Configuration | Input Type | Number of Drivers | Package / Case | Package / Case | Package / Case | Supplier Device Package | Logic Voltage - VIL, VIH |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Surface Mount | -40 °C | 150 °C | 600 V | 150 ns | 50 ns | 20 V | 10 VDC | Independent | Half-Bridge | Non-Inverting | 2 | 0.154 in | 8-SOIC | 3.9 mm | 8-SOIC | 0.8 V 2.9 V |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Surface Mount | -40 °C | 150 °C | 600 V | 150 ns | 50 ns | 20 V | 10 VDC | Independent | Half-Bridge | Non-Inverting | 2 | 0.154 in | 8-SOIC | 3.9 mm | 8-SOIC | 0.8 V 2.9 V |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Through Hole | -40 °C | 150 °C | 600 V | 150 ns | 50 ns | 20 V | 10 VDC | Independent | Half-Bridge | Non-Inverting | 2 | 8-DIP (0.300" 7.62mm) | 8-PDIP | 0.8 V 2.9 V |