IPL65R Series

Manufacturer: INFINEON

Catalog

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 195 MOHM; HIGHEST PERFORMANCE

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPL65R195C7AUMA1	23 nC	1150 pF	195 mOhm	650 V	MOSFET (Metal Oxide)	-40 °C	150 °C	10 V	4 V	Surface Mount	75 W	12 A	4-PowerTSFN	PG-VSON-4	20 V	N-Channel
INFINEON IPL65R190E6AUMA1	73 nC	1620 pF		650 V	MOSFET (Metal Oxide)	-40 °C	150 °C	10 V		Surface Mount	151 W	20.2 A	4-PowerTSFN	PG-VSON-4	20 V	N-Channel	190 mOhm	3.5 V
INFINEON IPL65R340CFDAUMA2	41 nC	1100 pF	340 mOhm	650 V	MOSFET (Metal Oxide)	-40 °C	150 °C	10 V	4.5 V	Surface Mount		10.9 A	4-PowerTSFN	PG-VSON-4	20 V	N-Channel			104.2 W
INFINEON IPL65R460CFDAUMA1			460 mOhm	650 V	MOSFET (Metal Oxide)	-40 °C	150 °C	10 V	4.5 V	Surface Mount	83.3 W	8.3 A	4-PowerTSFN	PG-VSON-4	20 V	N-Channel				31.5 nC	870 pF
INFINEON IPL65R165CFDAUMA1			165 mOhm	650 V	MOSFET (Metal Oxide)	-40 °C	150 °C	10 V	4.5 V	Surface Mount	195 W	21.3 A	4-PowerTSFN	PG-VSON-4	20 V	N-Channel				86 nC	2340 pF
INFINEON IPL65R165CFDAUMA2			165 mOhm	650 V	MOSFET (Metal Oxide)	-40 °C	150 °C	10 V	4.5 V	Surface Mount	195 W	21.3 A	4-PowerTSFN	PG-VSON-4	20 V	N-Channel				86 nC	2340 pF
INFINEON IPL65R660E6AUMA1	23 nC		660 mOhm	650 V	MOSFET (Metal Oxide)	-40 °C	150 °C	10 V	3.5 V	Surface Mount	63 W	7 A	4-PowerTSFN	PG-VSON-4	20 V	N-Channel					440 pF