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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Package / Case | Mounting Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | N-Channel | 19 nC | 13 A | DFN2020M-6 | 7.4 mOhm | 914 pF | 150 °C | -55 °C | 30 V | 6-UDFN Exposed Pad | Surface Mount | 1.9 W 12.5 W | 2.2 V | 4.5 V 10 V | 20 V | MOSFET (Metal Oxide) |