IR2136 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Gate Type | Logic Voltage - VIL, VIH | Package / Case [custom] | Package / Case | Package / Case [custom] | Number of Drivers | High Side Voltage - Max (Bootstrap) [Max] | Channel Type | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | Input Type | Supplier Device Package | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Mounting Type | Supplier Device Package | Supplier Device Package [x] | Supplier Device Package [y] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 0.295 " | 28-SOIC | 7.5 mm | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 28-SOIC | Half-Bridge | 125 ns | 50 ns | Surface Mount | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 44-LCC (J-Lead) 32 Leads | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 44-PLCC | Half-Bridge | 125 ns | 50 ns | Surface Mount | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 0.295 " | 28-SOIC | 7.5 mm | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 28-SOIC | Half-Bridge | 125 ns | 50 ns | Surface Mount | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 28-DIP | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 28-PDIP | Half-Bridge | 125 ns | 50 ns | Through Hole | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 28-DIP | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 28-PDIP | Half-Bridge | 125 ns | 50 ns | Through Hole | 15.24 mm | 0.6 in | |||||
INFINEON | |||||||||||||||||||||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 0.295 " | 28-SOIC | 7.5 mm | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 28-SOIC | Half-Bridge | 125 ns | 50 ns | Surface Mount | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 44-LCC (J-Lead) 32 Leads | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 44-PLCC | Half-Bridge | 125 ns | 50 ns | Surface Mount | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 44-LCC (J-Lead) 32 Leads | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 44-PLCC | Half-Bridge | 125 ns | 50 ns | Surface Mount | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 0.8 V 3 V | 0.295 " | 28-SOIC | 7.5 mm | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 20 V | 10 VDC | Inverting | 28-SOIC | Half-Bridge | 125 ns | 50 ns | Surface Mount |