MBRA120ET3 Series

1.0 A, 20 V, Schottky Power Rectifier, Surface Mount

Catalog

1.0 A, 20 V, Schottky Power Rectifier, Surface Mount

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor MBRA120LT3	395 mV	Schottky	200 µA	20 V	Surface Mount	DO-214AC SMA	1 A	SMA	200 mA 500 ns
ON Semiconductor MBRA120ET3G	530 mV	Schottky	10 µA	20 V	Surface Mount	DO-214AC SMA	1 A	SMA	200 mA 500 ns	150 °C	-55 °C
ON Semiconductor MBRA120ET3	530 mV	Schottky	10 µA	20 V	Surface Mount	DO-214AC SMA	1 A	SMA	200 mA 500 ns	150 °C	-55 °C

Catalog

1.0 A, 20 V, Schottky Power Rectifier, Surface Mount

Key Features

• Compact Package with J-Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over-Voltage Protection

• Optimized for Low Leakage CurrentMechanical Characteristics:

• Case: Molded Epoxy

• Epoxy Meets UL94, VO at 1/8"

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Polarity: Polarity Band Indicates Cathode Lead

• Available in 12 mm Tape, 5000 Units per 13 inch Reel

• Marking: B1E2

Description

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.