TSM4N90 Series
Manufacturer: Taiwan Semiconductor Corporation
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MOSFET N-CHANNEL 900V 4A TO220
| Part | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Supplier Device Package | Technology | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Taiwan Semiconductor Corporation | 25 nC | 38.7 W | TO-220 | MOSFET (Metal Oxide) | Through Hole | N-Channel | 4 Ohm | 4 V | TO-220-3 | 955 pF | 30 V | 4 A | 10 V | 150 °C | -55 °C | 900 V |