TPN2R805PL Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 45 V, 0.0028 Ω@10V, TSON ADVANCE, U-MOSⅨ-H
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Technology | Mounting Type | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 2.67 W 104 W | 39 nC | 3200 pF | 4.5 V 10 V | 8-TSON Advance (3.1x3.1) | 2.4 V | 45 V | 8-PowerVDFN | MOSFET (Metal Oxide) | Surface Mount | 20 V | N-Channel | 2.8 mOhm | 175 °C |