IRFU9210 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 1.9A TO251AA
| Part | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 20 V | -55 °C | 150 °C | 1.9 A | 2.5 W 25 W | P-Channel | 200 V | Through Hole | 10 V | 3 Ohm | 8.9 nC | IPAK TO-251-3 Short Leads TO-251AA | TO-251AA | 170 pF | 4 V | MOSFET (Metal Oxide) |