SS10P3 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 10A TO277A
| Part | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Current - Average Rectified (Io) | Speed | Supplier Device Package | Grade | Qualification | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 800 µA | 560 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 10 A | 200 mA 500 ns | TO-277A (SMPC) | |||||
Vishay General Semiconductor - Diodes Division | 550 µA | 530 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 200 mA 500 ns | TO-277A (SMPC) | Automotive | AEC-Q101 | 1 Pair Common Cathode | 5 A | ||
Vishay General Semiconductor - Diodes Division | 850 µA | 520 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 200 mA 500 ns | TO-277A (SMPC) | 1 Pair Common Cathode | 5 A | ||||
Vishay General Semiconductor - Diodes Division | 550 µA | 530 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 200 mA 500 ns | TO-277A (SMPC) | 1 Pair Common Cathode | 5 A | ||||
Vishay General Semiconductor - Diodes Division | 800 µA | 560 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 10 A | 200 mA 500 ns | TO-277A (SMPC) | Automotive | AEC-Q101 | 750 pF | ||
Vishay General Semiconductor - Diodes Division | 550 µA | 530 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 200 mA 500 ns | TO-277A (SMPC) | 1 Pair Common Cathode | 5 A | ||||
Vishay General Semiconductor - Diodes Division | 800 µA | 560 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 10 A | 200 mA 500 ns | TO-277A (SMPC) | |||||
Vishay General Semiconductor - Diodes Division | 800 µA | 560 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 10 A | 200 mA 500 ns | TO-277A (SMPC) | |||||
Vishay General Semiconductor - Diodes Division | 550 µA | 530 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 200 mA 500 ns | TO-277A (SMPC) | Automotive | AEC-Q101 | 1 Pair Common Cathode | 5 A | ||
Vishay General Semiconductor - Diodes Division | 550 µA | 530 mV | Schottky | 30 V | Surface Mount | 150 °C | -55 °C | 3-PowerDFN TO-277 | 200 mA 500 ns | TO-277A (SMPC) | 1 Pair Common Cathode | 5 A |