IR2213 Series

Manufacturer: INFINEON

Catalog

MOSFET DRIVER DUAL, LOW & HIGH SIDE, 12V-20V SUPPLY, 2.5A PEAK OUT, DIP-14

Part	Gate Type	Supplier Device Package	Logic Voltage - VIL, VIH	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Input Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature
INFINEON IR2213PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	6 V 9.5 V	2	25 ns	17 ns	14-DIP	0.3 in	7.62 mm	2 A	2.5 A	Independent	1.2 kV	Through Hole	Half-Bridge	150 °C	-55 °C	Non-Inverting	12 VDC	20 V
INFINEON IR2213STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	6 V 9.5 V	2	25 ns	17 ns	16-SOIC	0.295 "	7.5 mm	2 A	2.5 A	Independent	1.2 kV	Surface Mount	Half-Bridge			Non-Inverting	12 VDC	20 V	125 ¯C
INFINEON IR2213S	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	6 V 9.5 V	2	25 ns	17 ns	16-SOIC	0.295 "	7.5 mm	2 A	2.5 A	Independent	1.2 kV	Surface Mount	Half-Bridge	150 °C	-55 °C	Non-Inverting	12 VDC	20 V
INFINEON IR2213SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	16-SOIC	6 V 9.5 V	2	25 ns	17 ns	16-SOIC	0.295 "	7.5 mm	2 A	2.5 A	Independent	1.2 kV	Surface Mount	Half-Bridge	150 °C	-55 °C	Non-Inverting	12 VDC	20 V
INFINEON IR2213	IGBT MOSFET (N-Channel) N-Channel MOSFET	14-DIP	6 V 9.5 V	2	25 ns	17 ns	14-DIP	0.3 in	7.62 mm	2 A	2.5 A	Independent	1.2 kV	Through Hole	Half-Bridge	150 °C	-55 °C	Non-Inverting	12 VDC	20 V