SI7983 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 20V 7.7A PPAK SO8
| Part | Power - Max [Max] | Mounting Type | FET Feature | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Configuration | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.4 W | Surface Mount | Logic Level Gate | 17 mOhm | PowerPAK® SO-8 Dual | -55 °C | 150 °C | PowerPAK® SO-8 Dual | 74 nC | 20 V | 1 V | 7.7 A | 2 P-Channel | MOSFET (Metal Oxide) |
Vishay General Semiconductor - Diodes Division | 1.4 W | Surface Mount | Logic Level Gate | 17 mOhm | PowerPAK® SO-8 Dual | -55 °C | 150 °C | PowerPAK® SO-8 Dual | 74 nC | 20 V | 1 V | 7.7 A | 2 P-Channel | MOSFET (Metal Oxide) |