IPB60R280 Series

Manufacturer: INFINEON

Catalog

TRANS MOSFET N-CH 600V 13.8A 3-PIN(2+TAB) D2PAK T/R

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPB60R280C6ATMA1	43 nC	3.5 V	280 mOhm	10 V	MOSFET (Metal Oxide)	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	104 W	13.8 A	150 °C	-55 °C	Surface Mount	20 V	950 pF
INFINEON IPB60R280P7ATMA1		4 V	280 mOhm	10 V	MOSFET (Metal Oxide)	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	53 W	12 A	150 °C	-55 °C	Surface Mount	20 V		18 nC
INFINEON IPB60R280CFD7ATMA1		4.5 V	280 mOhm	10 V	MOSFET (Metal Oxide)	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	51 W	9 A	150 °C	-55 °C	Surface Mount	20 V	807 pF	18 nC	PG-TO263-3-2
INFINEON IPB60R280P6ATMA1		4.5 V	280 mOhm	10 V	MOSFET (Metal Oxide)	600 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	104 W	13.8 A	150 °C	-55 °C	Surface Mount	20 V		25.5 nC		1190 pF