High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.15 Ω@10V, TO-220SIS, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.15 Ω@10V, TO-220SIS, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.15 Ω@10V, TO-220SIS, DTMOSⅣ-H
| Part | Operating Temperature | Technology | Vgs (Max) | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | MOSFET (Metal Oxide) | 30 V | TO-220SIS | N-Channel | 650 V | 50 nC | 10 V | 22 A | 3.5 V | Through Hole | TO-220-3 Full Pack | 150 mOhm | 2400 pF | 45 W |