NCD57090 Series

Isolated High Current Gate Driver

Catalog

Isolated High Current Gate Driver

Part	Pulse Width Distortion (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Mounting Type	Voltage - Output Supply [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]	Technology	Number of Channels	Supplier Device Package	Current - Peak Output	Approval Agency	Common Mode Transient Immunity (Min) [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Grade	Qualification
ON Semiconductor NCD57091ADWR2G	25 ns	125 °C	-40 °C	6.5 A	6.5 A	Surface Mount	32 V	8-SOIC	0.295 in	7.5 mm	Capacitive Coupling	1	8-SOIC	6.5 A	VDE	100 V/ns	13 ns	13 ns	90 ns	90 ns
ON Semiconductor NCV57090EDWR2G	30 ns	125 °C	-40 °C	6.5 A	6.5 A	Surface Mount	32 V	8-SOIC	0.295 in	7.5 mm	Capacitive Coupling	1	8-SOIC	6.5 A	VDE	100 V/ns	13 ns	13 ns	90 ns	90 ns	Automotive	AEC-Q100
ON Semiconductor NCD57091BDWR2G	25 ns	125 °C	-40 °C	6.5 A	6.5 A	Surface Mount	32 V	8-SOIC	0.295 in	7.5 mm	Capacitive Coupling	1	8-SOIC	6.5 A	VDE	100 V/ns	13 ns	13 ns	90 ns	90 ns
ON Semiconductor NCD57091CDWR2G	25 ns	125 °C	-40 °C	6.5 A	6.5 A	Surface Mount	32 V	8-SOIC	0.295 in	7.5 mm	Capacitive Coupling	1	8-SOIC	6.5 A	VDE	100 V/ns	13 ns	13 ns	90 ns	90 ns
ON Semiconductor NCV57091CDWR2G	25 ns	125 °C	-40 °C	6.5 A	6.5 A	Surface Mount	32 V	8-SOIC	0.295 in	7.5 mm	Capacitive Coupling	1	8-SOIC	6.5 A	VDE	100 V/ns	13 ns	13 ns	90 ns	90 ns	Automotive	AEC-Q100
ON Semiconductor NCV57091ADWR2G	25 ns	125 °C	-40 °C	6.5 A	6.5 A	Surface Mount	32 V	8-SOIC	0.295 in	7.5 mm	Capacitive Coupling	1	8-SOIC	6.5 A	VDE	100 V/ns	13 ns	13 ns	90 ns	90 ns	Automotive	AEC-Q100
ON Semiconductor NCD57090ADWR2G		125 °C	-40 °C	6.5 A	6.5 A	Surface Mount	32 V	8-SOIC	0.295 in	7.5 mm	Capacitive Coupling	1	8-SOIC	6.5 A	VDE	100 V/ns	13 ns	13 ns	90 ns	90 ns

Catalog

Isolated High Current Gate Driver

Key Features

• High Peak Output Current (+6.5 A/-6.5 A)

• Short Propagation Delays with Accurate Matching

• High Transient & Electromagnetic Immunity

• 5 KVrms On-Chip Galvanic Isolation

• Wide Bias Voltage Ranges and Input Voltage Range

• Active Miller Clamp or Negative Gate Voltage or Split Outputs

Description

NCD57090A, NCD57090B, NCD57090C, NCD57090D, NCD57090E and NCD57090F are high−current single channel SiC/MOSFET/IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090A/D/F), negative power supply (NCD57090B) and separate high and low (OUTH and OUTL) driver outputs (NCD57090C/E) for system design convenience. NCD57090 (A/B/C/D/E/F) accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) are available in wide−body SOIC−8 package.