MJF32C Series

PNP Bipolar Power Transistor

Catalog

PNP Bipolar Power Transistor

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Frequency - Transition	Mounting Type	Current - Collector Cutoff (Max) [Max]
ON Semiconductor MJF32C	2 W	100 V	150 °C	-65 °C	10 hFE	TO-220FP	PNP	1.2 V	3 A	TO-220-3 Full Pack	3 MHz	Through Hole	300 µA

Catalog

PNP Bipolar Power Transistor

Key Features

• Collector–Emitter Saturation Voltage–VCE(sat)= 1.2 Vdc (Max) @ IC= 3.0 Adc

• Collector–Emitter Sustaining Voltage– VCEO(sus)= 100 Vdc (Min)

• High Current Gain – Bandwidth ProductfT= 3.0 MHz (Min) @ IC= 500 mAdc

• UL Recognized, File #E69369, to 3500 VRMS Isolation

• Pb-Free Packages are Available

Description

The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices.