FDD8782 Series

N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ

Catalog

N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ

Part	Technology	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
ON Semiconductor FDD8782	MOSFET (Metal Oxide)	Surface Mount	2.5 V	4.5 V 10 V	35 A	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	1220 pF	11 mOhm	N-Channel	25 nC	TO-252AA	25 V	50 W

Catalog

N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ

Key Features

• Max rDS(on)= 11.0mΩ at VGS= 10V, ID= 35A

• Max rDS(on)= 14.0mΩ at VGS= 4.5V, ID= 35A

• Low gate charge: Qg(10) = 18nC(Typ), VGS= 10V

• Low gate resistance

• Avalanche rated and 100% tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on)and fast switching speed.