71V124 Series

3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout

Manufacturer: Renesas Electronics Corporation

Catalog

3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout

Part	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Memory Organization	Memory Interface	Technology	Memory Size	Memory Type	Access Time	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Supplier Device Package	Write Cycle Time - Word, Page	Package / Case [x]	Package / Case [y]	Package / Case	Package / Case	Package / Case	Package / Case
Renesas Electronics Corporation 71V124SA15PHG	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-TSOP II	15 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA12TYGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	12 ns	3.6 V	3 V	Surface Mount	32-SOJ	12 ns			32-BSOJ	0.3 in 7.62 mm
Renesas Electronics Corporation 71V124SA12TYGI8	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	12 ns	3.6 V	3 V	Surface Mount	32-SOJ	12 ns			32-BSOJ	0.3 in 7.62 mm
Renesas Electronics Corporation 71V124SA10PHGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	10 ns	3.6 V	3.15 V	Surface Mount	32-TSOP II	10 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA15PHG8	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-TSOP II	15 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA10PHGI8	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	10 ns	3.6 V	3.15 V	Surface Mount	32-TSOP II	10 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA15PHGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-TSOP II	15 ns	0.4 in	10.16 mm	32-SOIC
Renesas Electronics Corporation 71V124SA15YG	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	15 ns	3.6 V	3 V	Surface Mount	32-SOJ	15 ns			32-BSOJ		10.16 mm	10.16 mm
Renesas Electronics Corporation 71V124SA10TYG	SRAM	70 °C	0 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	10 ns	3.6 V	3.15 V	Surface Mount	32-SOJ	10 ns			32-BSOJ	0.3 in 7.62 mm
Renesas Electronics Corporation 71V124SA12YGI	SRAM	85 °C	-40 °C	128K x 8	Parallel	SRAM - Asynchronous	1 Mbit	Volatile	12 ns	3.6 V	3 V	Surface Mount	32-SOJ	12 ns			32-BSOJ		10.16 mm	10.16 mm

Catalog

3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout

Description

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.