GD25D10 Series

Catalog

IC FLASH 1MBIT SPI/DUAL 8USON

Part	Technology	Operating Temperature (Max)	Operating Temperature (Min)	Package / Case	Memory Interface (Type)	Memory Size	Memory Type	Clock Frequency	Mounting Type	Memory Depth	Memory Width	Write Cycle Time - Word	Write Cycle Time - Page	Memory Format	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Package Width	Package Name	Package Length	Access Time
GigaDevice Semiconductor (HK) Limited GD25D10CEIGR	FLASH - NOR	85 °C	-40 °C	8-XFDFN Exposed Pad	SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K	8 bit	50 µs	4 ms	FLASH	3.6 V	2.7 V	3 mm	8-USON	2 mm
GigaDevice Semiconductor (HK) Limited GD25D10CTEGR	FLASH - NOR (SLC)	125 °C	-40 °C		SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K	8 bit	80 µs	4 ms	FLASH	3.6 V	2.7 V	3.9 mm	8-SOIC 8-SOP	0.154 in	6 ns
GigaDevice Semiconductor (HK) Limited GD25D10CTIG	FLASH - NOR	85 °C	-40 °C		SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K	8 bit	50 µs	4 ms	FLASH	3.6 V	2.7 V	3.9 mm	8-SOIC 8-SOP	0.154 in
GigaDevice Semiconductor (HK) Limited GD25D10CKIGR	FLASH - NOR	85 °C	-40 °C	8-XFDFN Exposed Pad	SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K	8 bit	50 µs	4 ms	FLASH	3.6 V	2.7 V	1.5 mm	8-USON	1.5 mm