GD25D10 Series

Catalog

IC FLASH 1MBIT SPI/DUAL 8USON

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Interface	Memory Size	Memory Type	Clock Frequency	Mounting Type	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Format	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Write Cycle Time - Word, Page [x]	Access Time	Package / Case	Package / Case
GigaDevice Semiconductor (HK) Limited GD25D10CEIGR	FLASH - NOR	85 C	-40 ¯C	8-XFDFN Exposed Pad	SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K	50 µs	4 ms	FLASH	3.6 V	2.7 V	8-USON (2x3)
GigaDevice Semiconductor (HK) Limited GD25D10CTEGR	FLASH - NOR (SLC)	125 °C	-40 °C	8-SOIC	SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K			FLASH	3.6 V	2.7 V	8-SOP	4 ms 80 µs	6 ns	0.154 in	3.9 mm
GigaDevice Semiconductor (HK) Limited GD25D10CTIG	FLASH - NOR	85 C	-40 ¯C	8-SOIC	SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K	50 µs	4 ms	FLASH	3.6 V	2.7 V	8-SOP			0.154 in	3.9 mm
GigaDevice Semiconductor (HK) Limited GD25D10CKIGR	FLASH - NOR	85 C	-40 ¯C	8-XFDFN Exposed Pad	SPI - Dual I/O	1 Mbit	Non-Volatile	100 MHz	Surface Mount	128 K	50 µs	4 ms	FLASH	3.6 V	2.7 V	8-USON (1.5x1.5)