SIHP38 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 43A TO220AB
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 43 A | 313 W | 65 mOhm | 183 nC | 3600 pF | 10 V | 4 V | Through Hole | N-Channel | MOSFET (Metal Oxide) | -55 °C | 150 °C | TO-220AB | 30 V | TO-220-3 | 600 V |