SI4276 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 30V 8A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Power - Max | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | MOSFET (Metal Oxide) | 2.5 V | 30 V | 8-SOIC | Surface Mount | 2.8 W 3.6 W | 1000 pF | 15.3 mOhm | 8 A | -55 °C | 150 °C | 26 nC | 2 N-Channel (Dual) |