MBRT500 Series

Catalog

DIODE MOD SCHOT 100V 250A 3TOWER

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Diode Configuration	Mounting Type	Speed	Package / Case	Current - Average Rectified (Io) (per Diode)
GeneSiC Semiconductor MBRT500100R	-55 °C	150 °C	880 mV	Three Tower	1 mA	100 V	Schottky	1 Pair Common Anode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT50080R	-55 °C	150 °C	880 mV	Three Tower	1 mA	80 V	Schottky	1 Pair Common Anode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT50035R	-55 °C	150 °C	750 mV	Three Tower	1 mA	35 V	Schottky	1 Pair Common Anode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT50020	-55 °C	150 °C	750 mV	Three Tower	1 mA	20 V	Schottky	1 Pair Common Cathode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT50045R	-55 °C	150 °C	750 mV	Three Tower	1 mA	45 V	Schottky	1 Pair Common Anode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT500200	-55 °C	150 °C	920 mV	Three Tower	1 mA	200 V	Schottky	1 Pair Common Cathode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT50020R	-55 °C	150 °C	750 mV	Three Tower	1 mA	20 V	Schottky	1 Pair Common Anode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT500200R	-55 °C	150 °C	920 mV	Three Tower	1 mA	200 V	Schottky	1 Pair Common Anode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT500150R	-55 °C	150 °C	880 mV	Three Tower	1 mA		Schottky	1 Pair Common Anode	Chassis Mount	200 mA 500 ns	Three Tower	250 A
GeneSiC Semiconductor MBRT50080	-55 °C	150 °C	880 mV	Three Tower	1 mA	80 V	Schottky	1 Pair Common Cathode	Chassis Mount	200 mA 500 ns	Three Tower	250 A