MSRT200 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 1.2KV 3TOWER
| Part | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Technology | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Supplier Device Package | Mounting Type | Speed [Min] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 Pair Common Cathode | 200 A | Standard | 1.2 V | 1.2 kV | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -40 °C | 175 ░C |
GeneSiC Semiconductor | 1 Pair Series Connection | 200 A | Standard | 1.1 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -55 °C | 150 °C | |
GeneSiC Semiconductor | 1 Pair Common Cathode | 200 A | Standard | 1.2 V | 600 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -40 °C | 175 ░C |
GeneSiC Semiconductor | 1 Pair Series Connection | 200 A | Standard | 1.1 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -55 °C | 150 °C | |
GeneSiC Semiconductor | 1 Pair Common Cathode | 200 A | Standard | 1.2 V | 1000 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -40 °C | 175 ░C |
GeneSiC Semiconductor | 1 Pair Common Cathode | 200 A | Standard | 1.2 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -40 °C | 175 ░C | |
GeneSiC Semiconductor | 1 Pair Series Connection | 200 A | Standard | 1.1 V | 1400 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -55 °C | 150 °C |
GeneSiC Semiconductor | 1 Pair Common Cathode | 200 A | Standard | 1.2 V | 1400 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 µA | -40 °C | 175 ░C |
GeneSiC Semiconductor | 1 Pair Series Connection | 200 A | Standard | 1.1 V | 1000 V | Three Tower | Three Tower | Chassis Mount | 200 mA 500 ns | 10 çA | -55 °C | 150 °C |