High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-220, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-220, DTMOSⅣ
| Part | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Power Dissipation (Max) | Operating Temperature | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1800 pF | TO-220 | 600 V | 10 V | 20 A | N-Channel | TO-220-3 | MOSFET (Metal Oxide) | 175 mOhm | 4.5 V | 55 nC | 30 V | 165 W | 150 °C | Through Hole |