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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | FET Type | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Grade | Qualification | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) | Package / Case | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | 2.8 Ohm | MOSFET (Metal Oxide) | 2.5 V 10 V | 9 pF | Automotive | AEC-Q101 | 1.5 V | 175 °C | -55 °C | 20 V | 3-XDFN Exposed Pad | Surface Mount Wettable Flank | DFN1110D-3 | 60 V | 340 mA | 6.9 W | 490 mW | 315 pC |