NTHL045N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L

Part	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type
ON Semiconductor NTHL045N065SC1	291 W	66 A	-55 °C	175 ░C	105 nC	TO-247-3	4.3 V	N-Channel	TO-247-3	50 mOhm	15 V 18 V	1870 pF	650 V	Through Hole

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L

Key Features

• High Junction Temperature

• 100% UIL Tested

• RoHS Compliant

• High Speed Switching and Low Capacitance

• 650V rated

• Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.