FQB22P10TM_F085 Series

100V P-Channel QFET® -22A, 125mΩ

Catalog

100V P-Channel QFET® -22A, 125mΩ

Part	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQB22P10TM-F085	4 V	Surface Mount	30 V	-55 °C	175 ░C	1500 pF	50 nC	Automotive	AEC-Q101	125 mOhm	MOSFET (Metal Oxide)	10 V	3.75 W 125 W	P-Channel	100 V	22 A	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
ON Semiconductor FQB2N80TM	5 V	Surface Mount	30 V	-55 °C	150 °C	550 pF				6.3 Ohm	MOSFET (Metal Oxide)	10 V	3.13 W 85 W	N-Channel	800 V	2.4 A	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
ON Semiconductor FQB25N33TM	5 V	Surface Mount	30 V	-55 °C	150 °C	2010 pF				230 mOhm	MOSFET (Metal Oxide)	10 V	3.1 W 250 W	N-Channel	330 V	25 A	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 nC

Catalog

100V P-Channel QFET® -22A, 125mΩ

Key Features

-22A, -100V, RDS(on)= 0.125Ω @VGS= -10 V

• Low gate charge ( typical 40 nC)

• Low Crss ( typical 160 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

• Qualified to AEC Q101

• RoHS Compliant

Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.