UCC28C57H-Q1 Series

Automotive, 30-V, low-power current-mode PWM controller, 18.8-V/15.5-V UVLO for SiC, 50% duty cycle

Catalog

Automotive, 30-V, low-power current-mode PWM controller, 18.8-V/15.5-V UVLO for SiC, 50% duty cycle

Part	Duty Cycle (Max) [Max]	Supplier Device Package	Grade	Number of Outputs	Mounting Type	Output Type	Synchronous Rectifier	Voltage - Supply (Vcc/Vdd)	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Switching	Output Phases	Control Features	Clock Sync	Package / Case	Package / Case	Package / Case	Output Configuration	Qualification	Function
Texas Instruments UCC28C57HQDRQ1	100 %	8-SOIC	Automotive	1	Surface Mount	Transistor Driver		28 V	-40 °C	150 °C	1 MHz	1	Current Limit Dead Time Control Enable Frequency Control Soft Start		0.154 in	8-SOIC	3.9 mm	Positive	AEC-Q100	Step-Down Step-Up Step-Up/Step-Down

Catalog

Automotive, 30-V, low-power current-mode PWM controller, 18.8-V/15.5-V UVLO for SiC, 50% duty cycle

Description

The UCC28C5x-Q1 family of devices are high performance current-mode PWM controllers which can be used to drive both Si and SiC MOSFETs in various applications. The UCC28C5x-Q1 family is a more efficient and robust version of the UCC28C4x-Q1. The UCC28C5x-Q1 family has new UVLO thresholds that allow for reliable SiC MOSFET operation (UCC28C56-59-Q1), in addition to existing UVLO thresholds for continued Si MOSFET support (UCC28C50-55-Q1). VDD absolute maximum voltage rating is extended from 20 V to 30 V for optimally driving the gate of 20-Vgs, 18-Vgs, or 15-Vgs SiC MOSFETs, while also allowing for the exclusion of an external LDO. The UCC28C5x-Q1 family of devices are high performance current-mode PWM controllers which can be used to drive both Si and SiC MOSFETs in various applications. The UCC28C5x-Q1 family is a more efficient and robust version of the UCC28C4x-Q1. The UCC28C5x-Q1 family has new UVLO thresholds that allow for reliable SiC MOSFET operation (UCC28C56-59-Q1), in addition to existing UVLO thresholds for continued Si MOSFET support (UCC28C50-55-Q1). VDD absolute maximum voltage rating is extended from 20 V to 30 V for optimally driving the gate of 20-Vgs, 18-Vgs, or 15-Vgs SiC MOSFETs, while also allowing for the exclusion of an external LDO.