High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 1.0 Ω@10V, TO-220SIS, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 1.0 Ω@10V, TO-220SIS, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 800 V, 1.0 Ω@10V, TO-220SIS, π-MOSⅧ
| Part | Vgs (Max) | Package / Case | Operating Temperature | Technology | Mounting Type | Supplier Device Package | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 30 V | TO-220-3 Full Pack | 150 °C | MOSFET (Metal Oxide) | Through Hole | TO-220SIS | N-Channel | 50 W | 2000 pF | 46 nC | 10 V | 1 Ohm | 800 V | 10 A |